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GT10J312(Q) IGBT Power Module Transistors IGBTs Single

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Part Number : GT10J312(Q)

Manufacturer : Toshiba Semiconductor and Storage

Description : IGBT 600V 10A 60W TO220SM

Category : Transistors - IGBTs - Single

Family : Transistors - IGBTs - Single

Place of Origin : Original

MOQ : Negotiable

Price : Negotiable

Delivery Time : Negotiable

Payment Terms : T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 100000

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Part Status	Obsolete
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	10A
Current - Collector Pulsed (Icm)	20A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Power - Max	60W
Switching Energy	-
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	400ns/400ns
Test Condition	300V, 10A, 100 Ohm, 15V
Reverse Recovery Time (trr)	200ns
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	TO-220SM
Shipment	UPS/EMS/DHL/FedEx Express.
Condtion	New original factory.

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GT10J312(Q) IGBT Power Module Transistors IGBTs Single

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