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KZ TECHNOLOGY (HONGKONG) LIMITED
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GT10J312(Q) IGBT Power Module Transistors IGBTs Single

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GT10J312(Q) IGBT Power Module Transistors IGBTs Single

Part Number : GT10J312(Q)

Manufacturer : Toshiba Semiconductor and Storage

Description : IGBT 600V 10A 60W TO220SM

Category : Transistors - IGBTs - Single

Family : Transistors - IGBTs - Single

Place of Origin : Original

MOQ : Negotiable

Price : Negotiable

Delivery Time : Negotiable

Payment Terms : T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram

Supply Ability : 100000

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GT10J312(Q) Specifications

Part Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 10A
Current - Collector Pulsed (Icm) 20A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Power - Max 60W
Switching Energy -
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C 400ns/400ns
Test Condition 300V, 10A, 100 Ohm, 15V
Reverse Recovery Time (trr) 200ns
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-220SM
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

GT10J312(Q) Packaging

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GT10J312(Q) IGBT Power Module Transistors IGBTs SingleGT10J312(Q) IGBT Power Module Transistors IGBTs SingleGT10J312(Q) IGBT Power Module Transistors IGBTs SingleGT10J312(Q) IGBT Power Module Transistors IGBTs Single


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